SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
Lin Mengzhe; Cao Qing; Yan Tingjing; Zhang Shuming; Chen Lianghui
2009
Source Publication半导体学报
Volume30Issue:2Pages:101-104
AbstractThe Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organizationsupported by the National Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3599532
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15767
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Lin Mengzhe,Cao Qing,Yan Tingjing,et al. NiO removal of Ni/Au Ohmic contact to p-GaN after annealing[J]. 半导体学报,2009,30(2):101-104.
APA Lin Mengzhe,Cao Qing,Yan Tingjing,Zhang Shuming,&Chen Lianghui.(2009).NiO removal of Ni/Au Ohmic contact to p-GaN after annealing.半导体学报,30(2),101-104.
MLA Lin Mengzhe,et al."NiO removal of Ni/Au Ohmic contact to p-GaN after annealing".半导体学报 30.2(2009):101-104.
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