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题名: Effect of a step quantum well structure and an electric-field on the Rashba spin splitting
作者: Hao Yafei;  Chen Yonghai;  Hao Guodong;  Wang Zhanguo
发表日期: 2009
摘要: Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Hao Yafei;Chen Yonghai;Hao Guodong;Wang Zhanguo.Effect of a step quantum well structure and an electric-field on the Rashba spin splitting,半导体学报,2009,30(6):11-14
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