SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
Shi Mingji; Wang Zhanguo; Liu Shiyong; Peng Wenbo; Xiao Haibo; Zhang Changsha; Zeng Xiangbo
2009
Source Publication半导体学报
Volume30Issue:6Pages:25-28
AbstractBoron-doped hydrogenated silicon films with different gaseous doping ratios (B_2H_6/SiH_4) were deposited in a plasma-enhanced chemical vapor deposition (PECVD) system. The microstructure of the films was investigated by atomic force microscopy (AFM) and Raman scattering spectroscopy. The electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (E_a). The results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. The measurements of the Ⅰ-Ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. The junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe State Key Development Program for Basic Research of China,the National Natural Science Foundation of China,the National High Technology Research and Development Program of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3599564
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15759
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Shi Mingji,Wang Zhanguo,Liu Shiyong,et al. Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell[J]. 半导体学报,2009,30(6):25-28.
APA Shi Mingji.,Wang Zhanguo.,Liu Shiyong.,Peng Wenbo.,Xiao Haibo.,...&Zeng Xiangbo.(2009).Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell.半导体学报,30(6),25-28.
MLA Shi Mingji,et al."Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell".半导体学报 30.6(2009):25-28.
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