Knowledge Management System Of Institute of Semiconductors,CAS
| InP-base resonant tunneling diodes | |
Han Chunlin; Chen Chen; Zou Penghui; Zhang Yang ; Zeng Yiping; Xue Fangshi; Gao Jianfeng; Zhang Zheng; Geng Tao
| |
| 2009 | |
| Source Publication | 半导体学报
 |
| Volume | 30Issue:6Pages:48-50 |
| Abstract | We have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing.The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy.RTDs with a peak current density of 24.6 kA/cm~2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated. |
| metadata_83 | nanjing electronic devices institute;institute of semiconductors,chinese academy of sciences |
| Subject Area | 半导体材料 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3599569 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/15757 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Han Chunlin,Chen Chen,Zou Penghui,et al. InP-base resonant tunneling diodes[J]. 半导体学报,2009,30(6):48-50. |
| APA | Han Chunlin.,Chen Chen.,Zou Penghui.,Zhang Yang.,Zeng Yiping.,...&Geng Tao.(2009).InP-base resonant tunneling diodes.半导体学报,30(6),48-50. |
| MLA | Han Chunlin,et al."InP-base resonant tunneling diodes".半导体学报 30.6(2009):48-50. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3697.pdf（546KB） | 限制开放 | -- | Application Full Text | |||
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