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题名: Wet etching and infrared absorption of AlN bulk single crystals
作者: Li Weiwei;  Zhao Youwen;  Dong Zhiyuan;  Yang Jun;  Hu Weijie;  Ke Jianhong
发表日期: 2009
摘要: The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm~(-2) is observed on the (0001) A1 surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm~(-1), respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li Weiwei;Zhao Youwen;Dong Zhiyuan;Yang Jun;Hu Weijie;Ke Jianhong.Wet etching and infrared absorption of AlN bulk single crystals,半导体学报,2009,30(7):27-30
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