SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications
Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua
2009
Source Publication半导体学报
Volume30Issue:8Pages:34-38
AbstractThe simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the Chinese Academy of Sciences Foundation
Indexed ByCSCD
Language英语
CSCD IDCSCD:3657106
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15729
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Xie Jing,Liu Yunfei,Yang Jinling,et al. Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications[J]. 半导体学报,2009,30(8):34-38.
APA Xie Jing,Liu Yunfei,Yang Jinling,Tang Longjuan,&Yang Fuhua.(2009).Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications.半导体学报,30(8),34-38.
MLA Xie Jing,et al."Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications".半导体学报 30.8(2009):34-38.
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