Knowledge Management System Of Institute of Semiconductors,CAS
| Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications | |
| Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua | |
| 2009 | |
| Source Publication | 半导体学报
 |
| Volume | 30Issue:8Pages:34-38 |
| Abstract | The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices. |
| metadata_83 | institute of semiconductors,chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | the National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the Chinese Academy of Sciences Foundation |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3657106 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/15729 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Xie Jing,Liu Yunfei,Yang Jinling,et al. Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications[J]. 半导体学报,2009,30(8):34-38. |
| APA | Xie Jing,Liu Yunfei,Yang Jinling,Tang Longjuan,&Yang Fuhua.(2009).Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications.半导体学报,30(8),34-38. |
| MLA | Xie Jing,et al."Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications".半导体学报 30.8(2009):34-38. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3673.pdf（380KB） | 限制开放 | -- | Application Full Text | |||
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