Knowledge Management System Of Institute of Semiconductors,CAS
| Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions | |
| Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude | |
| 2009 | |
| Source Publication | 半导体学报
 |
| Volume | 30Issue:8Pages:47-51 |
| Abstract | A GaSb crystal incorporated with Mn has been grown by the Bridgman method on the Polizon facility onboard the FOTON-M3 spacecraft. Structural defects and growth striations have been successfully revealed by the chemical etching method. By calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the Taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. The stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. Suggestions for improving the space experiment to improve the quality of the crystal are given. |
| metadata_83 | institute of semiconductors,chinese academy of sciences |
| Subject Area | 半导体材料 |
| Funding Organization | the Space Agency of China and the Chinese Academy of Sciences Project |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3657109 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/15725 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Chen Xiaofeng,Chen Nuofu,Wu Jinliang,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009,30(8):47-51. |
| APA | Chen Xiaofeng,Chen Nuofu,Wu Jinliang,Zhang Xiulan,Chai Chunlin,&Yu Yude.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报,30(8),47-51. |
| MLA | Chen Xiaofeng,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 30.8(2009):47-51. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3671.pdf（393KB） | 限制开放 | -- | Application Full Text | |||
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