SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Influence of a tilted cavity on quantum-dot optoelectronic active devices
Liu Wanglai; Xu Bo; Liang Ping; Hu Ying; Sun Hong; Lü Xueqin; Wang Zhanguo
Source Publication半导体学报
AbstractQuantum-dot laser diodes (QD-LDs) with a Fabry-Perot cavity and quantum-dot semiconductor optical amplifiers (QD-SOAs) with 7° tilted cavity were fabricated. The influence of a tilted cavity on optoelectronic active devices was also investigated. For the QD-LD, high performance was observed at room temperature. The threshold current was below 30 mA and the slope efficiency was 0.36 W/A. In contrast, the threshold current of the QD-SOA approached 1000 mA, which indicated that low facet reflectivity was obtained due to the tilted cavity design.A much more inverted carrier population was found in the QD-SOA active region at high operating current, thus offering a large optical gain and preserving the advantages of quantum dots in optical amplification and processing applications. Due to the inhomogeneity and excited state transition of quantum dots, the full width at half maximum of the electroluminescence spectrum of the QD-SOA was 81.6 nm at the injection current of 120 mA, which was ideal for broad bandwidth application in a wavelength division multiplexing system. In addition, there was more than one lasing peak in the lasing spectra of both devices and the separation of these peak positions was 6-8 nm,which is approximately equal to the homogeneous broadening of quantum dots.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe State Key Development Program for Basic Research of China,the National Natural Science Foundation of China
Indexed ByCSCD
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Recommended Citation
GB/T 7714
Liu Wanglai,Xu Bo,Liang Ping,et al. Influence of a tilted cavity on quantum-dot optoelectronic active devices[J]. 半导体学报,2009,30(9):37-40.
APA Liu Wanglai.,Xu Bo.,Liang Ping.,Hu Ying.,Sun Hong.,...&Wang Zhanguo.(2009).Influence of a tilted cavity on quantum-dot optoelectronic active devices.半导体学报,30(9),37-40.
MLA Liu Wanglai,et al."Influence of a tilted cavity on quantum-dot optoelectronic active devices".半导体学报 30.9(2009):37-40.
Files in This Item:
File Name/Size DocType Version Access License
3667.pdf(461KB) 限制开放--Application Full Text
Related Services
Recommend this item
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu Wanglai]'s Articles
[Xu Bo]'s Articles
[Liang Ping]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu Wanglai]'s Articles
[Xu Bo]'s Articles
[Liang Ping]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu Wanglai]'s Articles
[Xu Bo]'s Articles
[Liang Ping]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.