SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High-performance electroabsorption modulator
Zhang Wei; Pan Jiaoqing; Zhu Hongliang; Wang Huan; Wang Wei
2009
Source Publication半导体学报
Volume30Issue:9Pages:53-56
AbstractA 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing, using only a two-step low-pressure metal-organic vapor phase epitaxial process. An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties. In the experiment high modulation speed and high extinction ratio are obtained simultaneously, the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz, and extinction ration is as high as 16 dB.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organizationthe National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the National Natural Science Foundation of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3657148
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15715
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhang Wei,Pan Jiaoqing,Zhu Hongliang,et al. High-performance electroabsorption modulator[J]. 半导体学报,2009,30(9):53-56.
APA Zhang Wei,Pan Jiaoqing,Zhu Hongliang,Wang Huan,&Wang Wei.(2009).High-performance electroabsorption modulator.半导体学报,30(9),53-56.
MLA Zhang Wei,et al."High-performance electroabsorption modulator".半导体学报 30.9(2009):53-56.
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