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题名: Lithography-independent and large scale fabrication of a metal electrode nanogap
作者: Li Yan;  Wang Xiaofeng;  Zhang Jiayong;  Wang Xiaodong;  Fan Zhongchao;  Yang Fuhua
发表日期: 2009
摘要: A lithography-independent and wafer scale method to fabricate a metal nanogap structure is demon-strated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography.Then, by depositing conformal SiO_2 on the polysilicon pattern, etching back SiO_2 anisotropically in the perpendic-ular direction and removing the polysilicon with KOH, a sacrificial SiO_2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO_2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO_2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.
刊名: 半导体学报
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li Yan;Wang Xiaofeng;Zhang Jiayong;Wang Xiaodong;Fan Zhongchao;Yang Fuhua.Lithography-independent and large scale fabrication of a metal electrode nanogap,半导体学报,2009,30(9):142-145
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