SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Lithography-independent and large scale fabrication of a metal electrode nanogap
Li Yan; Wang Xiaofeng; Zhang Jiayong; Wang Xiaodong; Fan Zhongchao; Yang Fuhua
2009
Source Publication半导体学报
Volume30Issue:9Pages:142-145
AbstractA lithography-independent and wafer scale method to fabricate a metal nanogap structure is demon-strated. Polysilicon was first dry etched using photoresist (PR) as the etch mask patterned by photolithography.Then, by depositing conformal SiO_2 on the polysilicon pattern, etching back SiO_2 anisotropically in the perpendic-ular direction and removing the polysilicon with KOH, a sacrificial SiO_2 spacer was obtained. Finally, after metal evaporation and lifting-off of the SiO_2 spacer, an 82 nm metal-gap structure was achieved. The size of the nanogap is not determined by the photolithography, but by the thickness of the SiO_2. The method reported in this paper is compatible with modern semiconductor technology and can be used in mass production.
metadata_83engineering research center for semiconductor integrated technology, institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe National High-Tech Research and Development Program of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3657166
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15709
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Yan,Wang Xiaofeng,Zhang Jiayong,et al. Lithography-independent and large scale fabrication of a metal electrode nanogap[J]. 半导体学报,2009,30(9):142-145.
APA Li Yan,Wang Xiaofeng,Zhang Jiayong,Wang Xiaodong,Fan Zhongchao,&Yang Fuhua.(2009).Lithography-independent and large scale fabrication of a metal electrode nanogap.半导体学报,30(9),142-145.
MLA Li Yan,et al."Lithography-independent and large scale fabrication of a metal electrode nanogap".半导体学报 30.9(2009):142-145.
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