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Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film
Tang Longjuan; Zhu Yinfang; Yang Jinling; Li Yan; Zhou Wei; Xie Jing; Liu Yunfei; Yang Fuhua
2009
Source Publication半导体学报
Volume30Issue:9Pages:151-154
AbstractThe influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiN_x:H by HF solution. A low etch rate was achieved by increasing the SiH_4 gas flow rate or annealing temperature, or decreasing the NH_3 and N_2 gas flow rate. Concen-trated, buffered, and dilute hydrofluoric acid were utilized as etchants for SiO_2 and SiN_x:H. A high etching selectivity of SiO_2 over SiN_x:H was obtained using highly concentrated buffered HF.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe National High Technology Research and Development Program of China,the State Key Development Program for Basic Research of China,the Hundred Talents Plan of Chinese Academy of Sciences
Indexed ByCSCD
Language英语
CSCD IDCSCD:3657168
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15707
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Tang Longjuan,Zhu Yinfang,Yang Jinling,et al. Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film[J]. 半导体学报,2009,30(9):151-154.
APA Tang Longjuan.,Zhu Yinfang.,Yang Jinling.,Li Yan.,Zhou Wei.,...&Yang Fuhua.(2009).Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film.半导体学报,30(9),151-154.
MLA Tang Longjuan,et al."Dependence of wet etch rate on deposition, annealing conditions and etchants for PECVD silicon nitride film".半导体学报 30.9(2009):151-154.
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