SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
Ding Wuchang; Zuo Yuhua; Zhang Yun; Guo Jianchuan; Cheng Buwen; Yu Jinzhong; Wang Qiming; Guo Hengqun; Lü Peng; Shen Jiwei
2009
Source Publication半导体学报
Volume30Issue:10Pages:1-4
AbstractEr-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to ~2H_(11/2) to the ground state of Er~(3+) are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.
metadata_83institute of semiconductors, chinese academy of sciences;college of information science and engineering, huaqiao university
Subject Area光电子学
Funding Organizationthe National Natural Science Foundation of China,the State Key Development Program for Basic Research of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3675526
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15699
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ding Wuchang,Zuo Yuhua,Zhang Yun,et al. Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J]. 半导体学报,2009,30(10):1-4.
APA Ding Wuchang.,Zuo Yuhua.,Zhang Yun.,Guo Jianchuan.,Cheng Buwen.,...&Shen Jiwei.(2009).Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films.半导体学报,30(10),1-4.
MLA Ding Wuchang,et al."Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films".半导体学报 30.10(2009):1-4.
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