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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures
Zhao Jianzhi; Lin Zhaojun; Corrigan T D; Zhang Yu; Li Huijun; Wang Zhangguo
2009
Source Publication半导体学报
Volume30Issue:10Pages:10-12
AbstractThe influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.
metadata_83school of physics, shandong university;department of physics, university of maryland, college park;school of information science and engineering, shandong university;institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organizationthe National Natural Science Foundation of China,the State Key Development Program for Basic Research of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3675528
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15697
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhao Jianzhi,Lin Zhaojun,Corrigan T D,et al. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. 半导体学报,2009,30(10):10-12.
APA Zhao Jianzhi,Lin Zhaojun,Corrigan T D,Zhang Yu,Li Huijun,&Wang Zhangguo.(2009).Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures.半导体学报,30(10),10-12.
MLA Zhao Jianzhi,et al."Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures".半导体学报 30.10(2009):10-12.
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