SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
Huang Beiju; Zhang Xu; Chen Hongda
2009
Source Publication半导体学报
Volume30Issue:10Pages:81-85
AbstractA zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Funding Organizationthe National Natural Science Foundation of China,the National High Technology Research and Development Program of China
Indexed ByCSCD
Language英语
CSCD IDCSCD:3675544
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15695
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Huang Beiju,Zhang Xu,Chen Hongda. 1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J]. 半导体学报,2009,30(10):81-85.
APA Huang Beiju,Zhang Xu,&Chen Hongda.(2009).1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications.半导体学报,30(10),81-85.
MLA Huang Beiju,et al."1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications".半导体学报 30.10(2009):81-85.
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