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| A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic | |
| Du Rui; Dai Yang; Chen Yanling; Yang Fuhua | |
| 2009 | |
| Source Publication | 半导体学报
 |
| Volume | 30Issue:3Pages:87-91 |
| Abstract | A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved. |
| metadata_83 | research center of semiconductor integration, institute of semiconductors, chinese academy of sciences |
| Subject Area | 光电子学 |
| Indexed By | CSCD |
| Language | 英语 |
| CSCD ID | CSCD:3743777 |
| Date Available | 2010-11-23 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/15663 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Recommended Citation GB/T 7714 | Du Rui,Dai Yang,Chen Yanling,et al. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. 半导体学报,2009,30(3):87-91. |
| APA | Du Rui,Dai Yang,Chen Yanling,&Yang Fuhua.(2009).A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic.半导体学报,30(3),87-91. |
| MLA | Du Rui,et al."A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic".半导体学报 30.3(2009):87-91. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3631.pdf（237KB） | 限制开放 | -- | Application Full Text | |||
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