SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic
Du Rui; Dai Yang; Chen Yanling; Yang Fuhua
2009
Source Publication半导体学报
Volume30Issue:3Pages:87-91
AbstractA voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.
metadata_83research center of semiconductor integration, institute of semiconductors, chinese academy of sciences
Subject Area光电子学
Indexed ByCSCD
Language英语
CSCD IDCSCD:3743777
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15663
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Du Rui,Dai Yang,Chen Yanling,et al. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. 半导体学报,2009,30(3):87-91.
APA Du Rui,Dai Yang,Chen Yanling,&Yang Fuhua.(2009).A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic.半导体学报,30(3),87-91.
MLA Du Rui,et al."A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic".半导体学报 30.3(2009):87-91.
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