SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
4×4热光SOI波导开关阵列
陈媛媛; 李艳萍; 余金中
2009
Source Publication光电子·激光
Volume20Issue:3Pages:283-285
Abstract设计并制作了阻塞型和完全无阻塞型4×4热光SOI(silicon-on-insulator)波导开关阵列.开关单元采用了多模干涉耦合器(MMI)-MZI(Mach-Zehnder intederometer)结构的2×2光开关.阻塞型光开关附加损耗为4.8~5.4 dB,串扰为-21.8 dB~-14.5 dB.完全无阻塞型光开关阵列附加损耗为6.6~9.6 dB,串扰为-25.8~-16.8 dB.两者的消光比都在17~25 dB内变化,开关单元功耗小于230 mW.器件的开关时间小于3μs.功耗和开关速度都明显优于SiO_2基和聚合物基的开关阵列.
metadata_83北京工商大学信息工程学院;北京大学;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:3761481
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15643
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈媛媛,李艳萍,余金中. 4×4热光SOI波导开关阵列[J]. 光电子·激光,2009,20(3):283-285.
APA 陈媛媛,李艳萍,&余金中.(2009).4×4热光SOI波导开关阵列.光电子·激光,20(3),283-285.
MLA 陈媛媛,et al."4×4热光SOI波导开关阵列".光电子·激光 20.3(2009):283-285.
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