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题名: COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING
作者: WANG QY;  ZAN YD;  WANG JH;  YU YH
发表日期: 1995
摘要: Chemically vapour deposited silicon on sapphire (SOS) films 0.25 mu m thick were implanted with Si-28(+) and recrystallized in solid phase by furnace annealing (FA) and IR rapid thermal annealing (RTA) in our laboratory. An improvement in crystalline quality can be obtained using both annealing procedures. After FA, it is hard to retain the intrinsic high resistivity value(10(4)-10(5) Ohm cm) observed in as-grown SOS films, so the improvement process cannot be put to practical use effectively. However, it is demonstrated that by properly adjusting the implantation and RTA conditions, significant improvements in both film quality and film autodoping can be accomplished. This work describes a modified double solid phase epitaxy process in which the intrinsic high resistivities of the as grown SOS films are retained. The mechanism of suppression of Al autodoping is discussed.
KOS主题词: Rapid thermal processing;  Epitaxy
刊名: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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WANG QY; ZAN YD; WANG JH; YU YH .COMPARISON OF PROPERTIES OF SOLID-PHASE EPITAXIAL SILICON-ON-SAPPHIRE FILMS RECRYSTALLIZED BY RAPID THERMAL ANNEALING AND FURNACE ANNEALING ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1995,29(0):43-46
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