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题名: HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS
作者: LI GH;  GONI AR;  SYASSEN K;  BRANDT O;  PLOOG K
发表日期: 1995
摘要: We have measured low-temperature photoluminescence spectra of InAs quantum dots embedded in a GaAs crystalline matrix under hydrostatic pressures up to 7 GPa. Below 4.2 GPa the spectra are dominated by the Gamma-like electron-heavy hole (HH) exciton transition in the InAs dots. Above 4.2 GPa the spectra show two X-related luminescence bands which are attributed to the indirect type-I transition between X(Xy) and HH states of the dots and the type-II transition from X states in GaAs to InAs HH states, respectively. In the Gamma-X crossover regime we find evidence for a pronounced mixing interaction between InAs Gamma-like and GaAs X-like states. The corresponding interaction potential is estimated to be 9 meV.
KOS主题词: Nanostructured materials;  Semiconductors;  HIGH PRESSURE;  Luminescence;  Hydrostatic pressure;  Electronic structure;  metallic superlattices;  transition;  excitons
刊名: JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K .HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS ,JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,1995,56(0):385-388
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