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题名: A STUDY OF THE COMPOSITION DISTRIBUTION AT THE TI/AL2O3 INTERFACE USING THE MCS(+)-SIMS TECHNIQUE
作者: CHEN X;  WANG YX
发表日期: 1995
摘要: In this article, the MCs(+)-SIMS technique has been used to characterize Ti/Al2O3 metal/insulator interfaces. Our experiment shows that by detecting MCs(+) secondary ions, the matrix and interface effects are reduced, and good depth profiles have been obtained. The experimental result also shows that with the increase of the annealing temperature (RT, 300 degrees C, 600 degrees C, 850 degrees C), the interface gets broadened gradually, indicating diffusion and reaction take place at the interface, and the interface reaction is enhanced with the increase in annealing temperature. When the temperature increases, the AlCs+ signal forms two plateaus in the Ti layer, indicating Al from the decomposition of Al2O3 diffuses into the Ti layer and exists as two new forms (phases). Also, with the increase of the annealing temperature, oxygen diffuses into the Ti layer gradually, and makes the O signal in the Ti layer increase significantly in the 850 degrees C annealed sample.
KOS主题词: Secondary
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
CHEN X; WANG YX .A STUDY OF THE COMPOSITION DISTRIBUTION AT THE TI/AL2O3 INTERFACE USING THE MCS(+)-SIMS TECHNIQUE ,APPLIED SURFACE SCIENCE ,1995,89(2):169-173
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