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题名: PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER
作者: HAO MS;  LIANG JW;  ZHENG LX;  DENG LS;  XIAO ZB;  HU XW
发表日期: 1995
摘要: Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of GaAs/Si epilayers have been studied by using PL spectrum, SIMS and Hall measurement. Compared to a typical PL spectrum of the GaAs/Si epilayers grown by conventional two-step method, a new peak was observed in our PL spectrum at the energy of 1.462 eV, which is assigned to the band-to-silicon acceptor recombination. The SIMS analysis indicates that the silicon concentration in this kind of GaAs/Si epilayers is about 10(18) cm(-3). But its carrier concentration (about 4 x 10(17) cm(-3)) is lower than the silicon concentration. The lower carrier concentration in this kind of GaAs/Si epilayer can be interpreted both as the result of higher compensation and as the result of the formation of the donor-defect complex. We also found that the high-quality and low-Si-concentration GaAs/Si epilayers can be regrown by using this kind of GaAs/Si epilayer as substrate. The FWHM of the X-ray (004) rocking curve from this regrowth GaAs epilayer is 118 '', it is much less than that of the first growth GaAs epilayer (160 '') and other reports for the GaAs/Si epilayer grown by using conventional two-step method (similar to 200 '').
KOS主题词: Photoluminescence;  Mass spectrometry;  ion microprobe;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  atomic layer deposition;  atomic layer deposition;  Temperature;  mechanism
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
HAO MS; LIANG JW; ZHENG LX; DENG LS; XIAO ZB; HU XW .PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,1995,34(7B):L900-L902
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