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题名: GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS
作者: LUO CP;  CHIN MK;  YUAN Z;  XU ZY;  YANG XP;  ZHANG PH
发表日期: 1995
摘要: Growth interruption-induced microroughness is studied by photoluminescence (PL) of single quantum wells with different well widths and interruption times. Analysis of the peak splitting in the PL spectra shows that the adjacent peak splittings correspond to well width differences smaller than one monolayer. The number of split peaks increases with increasing well width, saturating when the well width exceeds 11 monolayers. This trend correlates well with the decrease in the lateral dimension of the exciton, which corresponds roughly to the minimum optically sampled area of the interface. For a given quantum well, a plot of the normalized integrated intensities of the split PL peaks versus the well width fluctuation is well described by a Gaussian distribution with an average fluctuation smaller than one monolayer. These results are consistent with the microroughness model.
KOS主题词: Semiconductors--Junctions
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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LUO CP; CHIN MK; YUAN Z; XU ZY; YANG XP; ZHANG PH .GROWTH INTERRUPTION INDUCED INTERFACE MICROROUGHNESS IN SINGLE QUANTUM-WELLS ,JOURNAL OF CRYSTAL GROWTH,1995,155(0):272-275
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