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题名: Diamond growth by carbon ion implantation of diamond
作者: Lee ST;  Lau WM;  Huang LJ;  Ren Z;  Qin F
发表日期: 1995
摘要: Medium energy (5-25 keV) C-13(+) ion implantation into diamond (100) to a fluence ranging from 10(16) cm(-2) to 10(18) cm(-2) was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 x 10(17) to 2 x 10(18) at. cm(-2) (with a dose rate of 5 x 10(15) at. cm(-2) s(-1) at 5 to 25 keV and 800 degrees C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects.
KOS主题词: Photography--Films;  Finite volume method;  Crystals;  Copper
刊名: DIAMOND AND RELATED MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lee ST; Lau WM; Huang LJ; Ren Z; Qin F .Diamond growth by carbon ion implantation of diamond ,DIAMOND AND RELATED MATERIALS,1995,4(12):1353-1359
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