高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption
作者: Yuan ZL;  Xu ZY;  Zheng BZ;  Luo CP;  Xu JZ;  Ge WK;  Zhang PH;  Yang XP
发表日期: 1996
摘要: Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the ''atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. (C) 1996 American Institute of Physics.
KOS主题词: atomic layer deposition;  Semiconductors--Junctions;  Temperature;  line width;  Dynamics
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
7062.pdf95KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Yuan ZL; Xu ZY; Zheng BZ; Luo CP; Xu JZ; Ge WK; Zhang PH; Yang XP .Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption ,JOURNAL OF APPLIED PHYSICS,1996,79(2):1073-1077
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Yuan ZL]的文章
 [Xu ZY]的文章
 [Zheng BZ]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Yuan ZL]的文章
 [Xu ZY]的文章
 [Zheng BZ]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发