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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Growth of GaAs on Si by using a thin Si film as buffer layer
作者: Hao MS;  Liang JW;  Jing XJ;  Wang YT;  Deng LS;  Xiao ZB;  Zheng LX;  Hu XW
发表日期: 1996
摘要: We report a novel technique for growing high-quality GaAs on Si substrate. The process involves deposition of a thin amorphous Si film prior to the conventional two-step growth. The GaAs layers grown on Si by this technique using metalorganic chemical vapor deposition exhibit a better surface morphology and higher crystallinity as compared to the samples gown by conventional two-step method. The full width at half maximum (FWHM) of the x-ray (004) rocking curve for 2.2 mu m thick GaAs/Si epilayer grown by using this new method is 160arcsec. The FWHM of the photoluminescence spectrum main peak for this sample is 2.1 meV. These are among the best results reported so far. In addition, the mechanism of this new growth method was studied using high-resolution transmission electron microscopy.
KOS主题词: atomic layer deposition
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Hao MS; Liang JW; Jing XJ; Wang YT; Deng LS; Xiao ZB; Zheng LX; Hu XW .Growth of GaAs on Si by using a thin Si film as buffer layer ,CHINESE PHYSICS LETTERS,1996,13(1):42-45
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