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题名: Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure
作者: Xu HD;  Wang S;  Zheng D;  Liu HZ;  Zhou LS
发表日期: 1996
摘要: Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed.
KOS主题词: Gallium arsenide
刊名: DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xu HD; Wang S; Zheng D; Liu HZ; Zhou LS .Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure ,DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995,1996,149(0):85-90
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