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题名: Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices
作者: Cheng WC;  Xia JB;  Xu SJ;  Zheng HZ;  Luo KJ;  Zhang PH;  Yang XP
发表日期: 1996
摘要: Radiative transition in delta-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.
KOS主题词: Quantum wells;  Energy bands
刊名: ACTA PHYSICA SINICA-OVERSEAS EDITION
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cheng WC; Xia JB; Xu SJ; Zheng HZ; Luo KJ; Zhang PH; Yang XP .Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices ,ACTA PHYSICA SINICA-OVERSEAS EDITION,1996,5(6):463-469
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