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题名: Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer
作者: Hao MS;  Shao CL;  Soga T;  Jimbo T;  Umeno M;  Liang JW;  Zheng LX;  Xiao ZB;  Xiao JF
发表日期: 1996
摘要: GaAs epilayers grown on Si by metalorganic chemical vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were characterized by deep-level transient spectroscopy (DLTS). Six electron traps with activation energies of 0.79, 0.67, 0.61, 0.55, 0.53 and 0.32 eV below the conduction band were determined by fitting the experimental spectra. Two of the levels, C (0.61 eV) and F (0.32 eV), were first detected in GaAs epilayers on Si and identified as the metastable defects M3 and M4, respectively. In order to improve the quality of GaAs/Si epilayers, another GaAs layer was grown on the GaAs/Si epilayers grown using MOCVD. The deep levels in this regrown GaAs epilayer were also studied using DLTS. Only the EL2 level was found in the regrown GaAs epilayers. These results show that the quality of the GaAs epilayer was greatly improved by applying this growth process.
KOS主题词: atomic layer deposition;  Dislocations
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Hao MS; Shao CL; Soga T; Jimbo T; Umeno M; Liang JW; Zheng LX; Xiao ZB; Xiao JF .Characterization and improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,1996,35(8A):L960-L963
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