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题名: Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature
作者: Sheng SR;  Kong GL;  Liao XB
发表日期: 1996
摘要: The intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-Si:H) films. The effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-Si:H films has been investigated in detail. With the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. The stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. It is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-Si:H films. (C) 1996 American Institute of Physics.
KOS主题词: Light effects;  Lighting;  Photoconductivity
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Sheng SR; Kong GL; Liao XB .Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature ,JOURNAL OF APPLIED PHYSICS,1996,80(6):3607-3609
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