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题名: Hydrogen adsorption induced surface reconstructions on Si(113) studied by LEED
作者: Hu XM;  Feng K;  Lin ZD;  Xing YR
发表日期: 1996
摘要: Surface reconstructions on Si(113) induced by dissociated hydrogen adsorption have been studied using low energy electron diffraction (LEED). It has been found that: (1) at 300 K and 80 K temperatures, with the increase of hydrogen coverage on the surface, the (3 x 1) phase transferred continuously into a hydrogen saturated (1 x 1)-2H phase; (2) flashing of the (1 x 1)-2H surface at about 1100 degrees C resulted in a complete new phase of(1 x 3) and further annealing of the sample at 1250 degrees C gave back the starting surface of (3 x 1); (3) saturated hydrogen adsorption at a sample temperature of 700 degrees C resulted in a stable new phase of(1 x 2)-H and further saturation doses of hydrogen at other temperatures below 700 degrees C did not change the (1 x 2) LEED pattern; (4) annealing of the (I x 2)-H surface in the same manner as (2) gave similar results.
KOS主题词: Metric system;  Silicon
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Hu XM; Feng K; Lin ZD; Xing YR .Hydrogen adsorption induced surface reconstructions on Si(113) studied by LEED ,APPLIED SURFACE SCIENCE,1996,103(1):101-105
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