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题名: A transmission electron microscopy study of microstructural defects in proton implanted silicon
作者: Gao M;  Duan XF;  Li JM;  Wang FL
发表日期: 1996
摘要: The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.
KOS主题词: Hydrogen
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gao M; Duan XF; Li JM; Wang FL .A transmission electron microscopy study of microstructural defects in proton implanted silicon ,JOURNAL OF APPLIED PHYSICS,1996,80(8):4767-4769
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