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题名: High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells
作者: Li GH;  Goni AR;  Syassen K;  Hou HQ;  Feng W;  Zhou JM
发表日期: 1996
摘要: We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs multiple quantum wells (MQW's) under hydrostatic pressures up to 8 GPa. In PL, only a single peak is observed below 4.9 GPa corresponding to the n = 1 heavy-hole (HH) exciton in the InxGa1-xAs wells. Above 4.9 GPa, new PL lines related to X-like conduction band states appear. They are assigned to the type-II transition from the X(Z) states in GaAs to the HH subband of the InxGa1-xAs wells and to the zero-phonon line and LO-phonon replica of the type-I transition involving the X(XY) valleys of the wells. In addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 GPa. This absorption is attributed to the pseudodirect transition between the HH subband and the X, state of the wells. This gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in MQW structures. From experimental level splittings we determine the valence band offset and the shear deformation potential for X states in the In0.2Ga0.8As layer.
KOS主题词: Hydrostatic pressure;  Band offset;  Photoluminescence;  Gallium arsenide;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Dependency;  Temperature
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM .High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells ,PHYSICAL REVIEW B,1996,54(19):13820-13826
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