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题名: Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy
作者: Fan TW;  Zou LF;  Wang ZG;  Hemment PLF;  Greaves SJ;  Watts JF
发表日期: 1996
摘要: Thermally stimulated redistribution and precipitation of excess arsenic in Ge0.5Si0.5 alloy has been studied by X-ray photoelectron spectroscopy (XPS), cross sectional transmission electron microscopy (XTEM) and X-ray energy disperse spectrometry (EDS). Samples were prepared by the implantation of 6 X 10(6) As+ cm(-2) and 100 keV with subsequent thermal processing at 800 degrees C and 1000 degrees C for 1 h. The XPS depth profiles from the implanted samples before and after the thermal annealing indicate that there is marked redistribution of the elements in heavily arsenic-implanted Ge0.5Si0.5 alloys during the annealing, including: (1) diffusion of As from the implanted region to the surface; (2) aggregation of Ge in the vicinity of the surface. A high density of precipitates was observed near the surface which were by XTEM and EDS identified as an arsenide. It is suggested that most of the implanted As in Ge0.5Si0.5 alloy exists in the form of GeAs.
KOS主题词: Electrical properties;  Layers;  Heterostructures;  Antimony;  metallic superlattices;  Diffusion;  Regrowth;  Silicon;  Metric system;  Silicon
刊名: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Fan TW; Zou LF; Wang ZG; Hemment PLF; Greaves SJ; Watts JF .Aggregation and precipitation in high dose as ion implanted Ge0.5Si0.5 alloy ,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS ,1996,119(4):510-514
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