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题名: Characterization of recombination centres in n-type Hg1-xCdxTe
作者: Zhou J;  Feng SL;  Lu LW;  Si CC;  Li YG;  Hu XN
发表日期: 1996
摘要: The defect levels in Hg1-xCdxTe P+N junction photodiodes (x = 0.4) were first studied using deep-level transient spectroscopy. Two electron traps, E(1)(0.06) and E(2)(0.15), and two hole traps, H-1(0.075) and H-2(0.29), were obtained, Characteristic parameters-the minority lifetime of the devices and the dynamic resistance-area product at zero bias-are estimated according to these levels. Results show that these two minority levels may be important in controlling lifetime. We have studied the recombination mechanism of the hole trap H-2(0.29) further. It has a large activation energy and satisfies the formula sigma(T) = sigma(x) exp(-E(F)/E(T)). This reflects the fact that its recombination mechanism is multiphonon nonradiative recombination, which is rarely reported in narrow-bandgap materials.
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou J; Feng SL; Lu LW; Si CC; Li YG; Hu XN .Characterization of recombination centres in n-type Hg1-xCdxTe ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1996,11(12):1878-1881
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