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题名: Two-dimensional excitonic emission in InAs submonolayers
作者: Yuan ZL;  Xu ZY;  Zheng BZ;  Xu JZ;  Li SS;  Ge WK;  Wang Y;  Wang J;  Chang LL;  Wang PD;  Torres CMS;  Ledentsov NN
发表日期: 1996
摘要: Photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1/12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a quasiwell. From the temperature dependence of the exciton linewidth, the exciton-LO-phonon scattering coefficient was found to be comparable to that in conventional two-dimensional quantum wells. In the TRPL measurements, the PL decay time increases linearly with temperature, which is a typical characteristic of free excitons in quantum wells. All these results indicate that the excitons localized in InAs exhibit two-dimensional properties of quantum wells, despite the topographical islandlike structure.
KOS主题词: Oscillator strength;  Atomic transition probabilities;  line width;  Photoluminescence;  Relaxation;  Dependency;  Heterostructures;  Localization
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yuan ZL; Xu ZY; Zheng BZ; Xu JZ; Li SS; Ge WK; Wang Y; Wang J; Chang LL; Wang PD; Torres CMS; Ledentsov NN .Two-dimensional excitonic emission in InAs submonolayers ,PHYSICAL REVIEW B,1996,54(23):16919-16924
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