高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current
作者: Chen YH;  Wang ZG;  Qian JJ;  Sun MF
发表日期: 1997
摘要: An analytical model is proposed to understand backgating in GaAs metal-semiconductor field-effect transistors (MESFETs), in which the effect of channel-substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000-4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. (C) 1997 American Institute of Physics.
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
6986.pdf95KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Chen YH; Wang ZG; Qian JJ; Sun MF .Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current ,JOURNAL OF APPLIED PHYSICS,1997,81(1):511-515
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Chen YH]的文章
 [Wang ZG]的文章
 [Qian JJ]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Chen YH]的文章
 [Wang ZG]的文章
 [Qian JJ]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发