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题名: Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices
作者: Sun BQ;  Jiang DS;  Liu ZX;  Zhang YH;  Liu W
发表日期: 1996
摘要: We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices under hydrostatic pressure up to 4.5 kbar. The pressure coefficient obtained from the experiment, 15.3 meV/kbar, provides a strong evidence for the formation of the electric field domain due to Gamma-X sequential resonant tunneling, At the same time, we have observed the transition between two kinds of sequential resonant tunneling processes within the pressure range from 0 to 4.5 kbar, where the transition pressure between Gamma-Gamma and Gamma-X sequential resonant tunneling is P-t similar to 1.6 kbar. For P < P-t, the electric field domain is formed by Gamma-Gamma sequential resonant tunneling, while for P > P-t, the electric field domain is preferably formed by Gamma-X sequential resonant tunneling. (C) 1996 American Institute of Physics.
KOS主题词: Superlattices as materials;  vibrating bodies;  Transportation;  Example;  Modeling;  well
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun BQ; Jiang DS; Liu ZX; Zhang YH; Liu W .Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices ,APPLIED PHYSICS LETTERS ,1996,69(4):520-522
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