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题名: Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs
作者: Chen YH;  Yang Z;  Li RG;  Wang YQ;  Wang ZG
发表日期: 1997
摘要: The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen YH; Yang Z; Li RG; Wang YQ; Wang ZG .Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs ,PHYSICAL REVIEW B,1997,55(12):R7379-R7382
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