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题名: Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field
作者: Sheng WD;  Xia JB
发表日期: 1996
摘要: We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.
KOS主题词: waveguide;  QUANTUM;  Transportation;  critical fluctuations;  Aerodynamics;  Conductors;  Heraldry
刊名: ACTA PHYSICA SINICA-OVERSEAS EDITION
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sheng WD; Xia JB .Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field ,ACTA PHYSICA SINICA-OVERSEAS EDITION,1996,5(9):700-704
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