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题名: Donor acceptor pair in molecular beam epitaxy grown GaN
作者: Ren GB;  Dewsnip DJ;  Lacklison DE;  Orton JW;  Cheng TS;  Foxon CT
发表日期: 1997
摘要: We have recently found evidence of new donor acceptor pair (DAP) luminescence in molecular beam epitaxy (MBE) grown films. A variety of nominally undoped samples have been studied by photoluminescence (PL) over a temperature range of 5-300 K. The samples show intensive luminescence al energies of 3.404-3.413 eV varying with different sample at 5 K, as well as a fairly strong (DX)-X-0 line at low temperature. We attribute the Line at 3.404-3.413 eV to DAP recombination which is over 0.1 eV different from the well known DAP caused by ME-doping in GaN. The DAP line shows fine structure. it even predominates in one particular sample. The peak position shifts to higher energy with temperature increasing from 5 up to 70 K, and as the excitation laser intensity increases. The data are consistent with DAP luminescence involving an acceptor level of about 90 meV (presumably carbon) above the valence band edge in GaN. It is much shallower than the acceptor level of 250 meV produced by the p-type dopant Mg which is commonly used at present. (C) 1997 Elsevier Science S.A.
KOS主题词: atomic layer deposition;  Photoluminescence;  Gallium arsenide;  Luminescence;  Cadmium;  contour dynamics method
刊名: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ren GB; Dewsnip DJ; Lacklison DE; Orton JW; Cheng TS; Foxon CT .Donor acceptor pair in molecular beam epitaxy grown GaN ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,1997,43(0):242-245
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