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题名: Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy
作者: Cheng TS;  Foxon CT;  Ren GB;  Jeffs NJ;  Orton JW;  Novikov SV;  Xin Y;  Brown PD;  Humphreys CJ;  Halliwell M
发表日期: 1997
摘要: Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.
KOS主题词: Light emitting diodes;  Gallium nitride
刊名: COMPOUND SEMICONDUCTORS 1996
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cheng TS; Foxon CT; Ren GB; Jeffs NJ; Orton JW; Novikov SV; Xin Y; Brown PD; Humphreys CJ; Halliwell M .Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy ,COMPOUND SEMICONDUCTORS 1996 ,1997,(155):259-262
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