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题名: Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices
作者: Pan D;  Zeng YP;  Wu J;  Kong MY
发表日期: 1997
摘要: With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.
KOS主题词: Misfit dislocations;  Layers;  Relaxation;  Defects;  strain;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Pan D; Zeng YP; Wu J; Kong MY .Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices ,JOURNAL OF CRYSTAL GROWTH,1997,181(3):297-300
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