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题名: Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy
作者: Liu JP;  Liu XF;  Li JP;  Sun DZ;  Kong MY
发表日期: 1997
摘要: Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C. It is found that the composition x increases and then saturates when the Ge cell temperature increases, which is different from the composition-dependent behavior in growth at high temperature as well as in growth by molecular beam epitaxy using disilane and germane. The enhanced hydrogen desorption from a Ge site alone cannot account for this abnormal composition-variation behavior. We attribute this behavior to the increase of rate constant of H desorption on a Si site when the Ge cell temperature increases.
KOS主题词: atomic layer deposition;  Segregation;  Separation;  Dependency;  Dynamics;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liu JP; Liu XF; Li JP; Sun DZ; Kong MY .Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,1997,181(4):441-445
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