The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

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	The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
	Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ; Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
	1997
Conference Name	10th International Conference on Superlattices, Microstructures and Microdevices
Source Publication	PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12
Pages	219-225
Conference Date	JUL 08-11, 1997
Conference Place	LINCOLN, NEBRASKA
Publication Place	BOX 11, 105523 MOSCOW, RUSSIA
Publisher	V S V CO. LTD
ISSN	0204-3467
metadata_83	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
Abstract	We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.
Keyword	Growth Interdiffusion Islands Scale
Subject Area	半导体物理
Funding Organization	Univv Nebraska, Coll Engn.; Ctr Mat Res & Anal.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/15093
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Wang ZM,Feng SL,Lu ZD,et al. The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix[C]. BOX 11, 105523 MOSCOW, RUSSIA:V S V CO. LTD,1997:219-225.

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