Characterization of GaSb substrate wafers for MOCVD III-V antimonides

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Characterization of GaSb substrate wafers for MOCVD III-V antimonides
	Peng RW; Ding YQ; Xu CM; Wang XG; Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
	1998
会议名称	7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII)
会议录名称	DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160
页码	417-420
会议日期	SEP 07-10, 1997
会议地点	TEMPLIN, GERMANY
出版地	TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
出版者	IOP PUBLISHING LTD
ISSN	0951-3248
ISBN	0-7503-0500-2
部门归属	acad sinica, shanghai inst met, shanghai 200050, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.
关键词	Vapor-phase Epitaxy Growth
学科领域	半导体物理
主办者	Deutsch Forsch Gemeinschaft.; Freiberger Compound Mat.; Gesell Forderung Angewandten Opt Optoelektr Quantenelektr & Spektroskopie EV.; Wacker Siltron AG.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15085
专题	中国科学院半导体研究所（2009年前）
通讯作者	Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
推荐引用方式 GB/T 7714	Peng RW,Ding YQ,Xu CM,et al. Characterization of GaSb substrate wafers for MOCVD III-V antimonides[C]. TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX:IOP PUBLISHING LTD,1998:417-420.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3062.pdf（240KB）			限制开放	--	请求全文