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题名: Observation of defects in GaN epilayers
作者: Kang JY;  Liu XL;  Ogawa T
出版日期: 1998
会议日期: SEP 07-10, 1997
摘要: GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.
会议名称: 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII)
KOS主题词: Potential scattering;  Aluminum oxide;  Development
会议文集: DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Kang JY; Liu XL; Ogawa T .Observation of defects in GaN epilayers .见:IOP PUBLISHING LTD .DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160,TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX ,1998,347-350
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