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题名: Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
作者: Zhou W;  Xu B;  Xu HZ;  Liu FQ;  Liang JB;  Wang ZG;  Zhu ZZ;  Li GH
出版日期: 1999
会议日期: JUN 24-26, 1998
摘要: Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.
会议名称: 40th Electronic Materials Conference (EMC-40)
KOS主题词: size effect;  Germanium;  Ensembles;  Development;  Shapes;  Dimensions
会议文集: JOURNAL OF ELECTRONIC MATERIALS, 28 (5)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhou W; Xu B; Xu HZ; Liu FQ; Liang JB; Wang ZG; Zhu ZZ; Li GH .Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) .见:MINERALS METALS MATERIALS SOC .JOURNAL OF ELECTRONIC MATERIALS, 28 (5),420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA ,1999,528-531
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