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题名: InP-based optoelectronic devices for optical fiber communications
作者: Luo Y;  Chen LH;  Li TN
出版日期: 1999
会议日期: JUN 15-17, 1998
摘要: In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.
会议名称: 1st Czech-Chinese Workshop on Advanced Materials for Optoelectronics (AMFO 98)
会议文集: CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Luo Y; Chen LH; Li TN .InP-based optoelectronic devices for optical fiber communications .见:CZECHOSLOVAK JNL OF PHYSICS .CZECHOSLOVAK JOURNAL OF PHYSICS, 49 (5),FYZIKALNI USTAV AV NA SLOVANCE 2, PRAGUE 180 40, CZECH REPUBLIC ,1999,751-756
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