Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

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	Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)
	Zhu JJ; Liu SY; Liang JW; Zhu JJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2000
会议名称	1st Asian Conference on Chemical Vapour Deposition
会议录名称	THIN SOLID FILMS, 368 (2)
页码	307-311
会议日期	MAY 10-13, 1999
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0040-6090
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
关键词	Raman Spectrum Thin Film Chemical Vapor Deposition Scattering Si
学科领域	半导体材料
主办者	Chinese Vacuum Soc, Thin Films Comm.; Chinese Electr Soc, Thin Films Comm.; Nat Sci Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14983
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu JJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhu JJ,Liu SY,Liang JW,et al. Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:307-311.

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