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| Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition | |
| Sun XL; Yang H; Zhu JJ; Wang YT; Chen Y; Li GH; Wang ZG; Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA. | |
| 2001 | |
| Conference Name | 4th International Conference on Nitride Semiconductors (ICNS-4) |
| Source Publication | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2) |
| Pages | 653-657 |
| Conference Date | JUL 16-20, 2001 |
| Conference Place | DENVER, COLORADO |
| Publication Place | PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY |
| Publisher | WILEY-V C H VERLAG GMBH |
| ISSN | 0031-8965 |
| metadata_83 | cas, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; cas, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; cas, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| Abstract | In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation. |
| Keyword | Gallium Nitride Luminescence Bulk |
| Subject Area | 半导体材料 |
| Indexed By | CPCI-S |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/14909 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA. |
| Recommended Citation GB/T 7714 | Sun XL,Yang H,Zhu JJ,et al. Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition[C]. PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2001:653-657. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2879.pdf（110KB） | 限制开放 | -- | Application Full Text | |||
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