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题名: Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
作者: Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H
出版日期: 2002
会议日期: JUL 01-06, 2001
摘要: Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.
会议名称: International Conference on Material for Advanced Technologies
KOS主题词: atomic layer deposition
会议文集: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H .Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,165-172
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